Given below are two statements:
Statement I: In a p-n junction diode, the width of the depletion region decreases under forward bias.
Statement II: The barrier potential of a p-n junction diode increases with an increase in doping concentration. Choose the correct answer from the options given below:

Question

Given below are two statements:

Statement I: In a p-n junction diode, the width of the depletion region decreases under forward bias.

Statement II: The barrier potential of a p-n junction diode increases with an increase in doping concentration. Choose the correct answer from the options given below:

TestHub · Accepted Answer

Statement I is true. Under forward bias, the applied voltage opposes the barrier potential, reducing the effective potential barrier and causing the depletion region to narrow.

Statement II is also true. An increase in doping concentration leads to a higher concentration of majority carriers, which in turn increases the diffusion current across the junction, resulting in a higher barrier potential to balance this diffusion.

Physics - Semiconductors Question with Solution | TestHub

Options:

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