Given that the mobility of electrons in Ge is 0.4 m 2 V − 1 s − 1 and electronic charge is 1.6 × 1 0 − 19 C . The number of donor atom ( per m 3 ) semiconductor of conductivity 500 mho / m is

U sing , σ = n e q μ e Here, σ = 500 mho / m e = 1.6 × 1 0 − 19 C μ e = 0.4 m 2 V − 1 s − 1 ∴ n e = 1.6 × 1 0 − 19 × 0.4 500 = 7.8 × 1 0 21 ≃ 8 × 1 0 21 m − 3

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PhysicsCurrent ElectricityMicroscopicMedium2 minPYQ_2013

PhysicsMediumsingle choice

Given that the mobility of electrons in Ge is $0.4 m^{2} V^{- 1} s^{- 1}$ and electronic charge is $1.6 \times 1 0^{- 19} C$ . The number of donor atom $($ per $m^{3}$ ) semiconductor of conductivity $500 mho / m$ is

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$U sing, σ = n_{e} q μ_{e}$ Here, $σ = 500 mho / m$ $e = 1.6 \times 1 0^{- 19} C$ $μ_{e} = 0.4 m^{2} V^{- 1} s^{- 1}$ $∴ n_{e} = \frac{500}{1.6 \times 1 0 ^{- 19} \times 0.4}$ $= 7.8 \times 1 0^{21} ≃ 8 \times 1 0^{21} m^{- 3}$

Stream:AIIMSSubject:PhysicsTopic:Current ElectricitySubtopic:Microscopic

⏱ 2mℹ️ Source: PYQ_2013

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