Physics - Semiconductors Question with Solution | TestHub

PhysicsSemiconductorsPN junctionMedium2 minQB
PhysicsMediumassertion reason

Statement-1 : When a P-N Junction is heavily doped, width of depletion region becomes very small.
Statement-2 : When a semiconductor is doped, the concentration of charge carriers increases.

Options:

Answer:
A
Solution:

Statement 2: doping adds donor or acceptor atoms, and each one supplies a free electron or hole, so the carrier concentration increases. It is true.

Statement 1: in the junction, these free carriers diffuse across and leave behind fixed ionized donor and acceptor atoms.

Heavier doping means a larger density of these fixed ionized dopants, so a larger space-charge density.

The junction potential barrier is then built across a much smaller width.

Here N is the dopant concentration; the relation assumes comparable barrier conditions.

So Statement 1 is true, and Statement 2 is true and is the correct explanation for it: doping raises the carrier and dopant-ion density, which narrows the depletion region. Answer A.

Stream:JEESubject:PhysicsTopic:SemiconductorsSubtopic:PN junction
⏱ 2mℹ️ Source: QB

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