The potential barrier of a P-N junction depends on:
I. Type of semiconductor (Si or Ge)
II. Doping concentration
III. Temperature

Question

The potential barrier of a P-N junction depends on: I. Type of semiconductor (Si or Ge) II. Doping concentration III. Temperature

TestHub · Accepted Answer

Options:

Answer:

D

Solution:

The potential barrier of a P-N junction is given by the relation $V_{0} = \frac{k T}{q} ln (\frac{N _{A} N _{D}}{n _{i}^{2}})$ .

Here, $N_{A}$ and $N_{D}$ are the doping concentrations of acceptor and donor atoms respectively, which shows the dependence on doping concentration.

$n_{i}$ is the intrinsic carrier concentration, which depends on the nature of the semiconductor material (Si or Ge) and the temperature.

$T$ is the absolute temperature, showing the direct dependence on temperature.

Thus, the potential barrier depends on the type of semiconductor, the doping concentration, and the temperature. All three factors I, II, and III are correct.

Answer: I, II, and III

Physics - Semiconductors Question with Solution | TestHub

Options:

Doubts & Discussion