Pure Silicon crystal at 300 K has equal electron and hole concentration of 1.5 × 1 0 16 m − 3 . Doping by indium increases n h = 4.5 × 1 0 22 m − 3 . The n e in the doped silicon is:

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Pure Silicon crystal at 300 K has equal electron and hole concentration of 1.5 × 1 0 16 m − 3 . Doping by indium increases n h ​ = 4.5 × 1 0 22 m − 3 . The n e ​ in the doped silicon is:

TestHub · Accepted Answer

In an extrinsic semiconductor: ​ n e ​ n h ​ = ( n i ​ ) 2 n e ​ × 4.5 × 1 0 22 = ( 1.5 × 1 0 16 ) 2 n e ​ = 4.4 × 1 0 22 2.25 × 1 0 32 ​ ∴ n e ​ = 5 × 1 0 9 ​

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