Consider a situation in which reverse biased current of a particular P - N junction increases when it is exposed to a light of wavelength ≤ 621 nm . During this process, enhancement in carrier concent

Question

Consider a situation in which reverse biased current of a particular $P - N$ junction increases when it is exposed to a light of wavelength $\leq 621 nm .$ During this process, enhancement in carrier concentration takes place due to generation of hole-electron pairs. The value of band gap is nearly.

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Answer:

A

Solution:

Band gap $= \frac{h c}{λ_{0}}$ ,
where $λ_{0} -$ threshold wavelength

Band gap $= \frac{1242 ev - nm}{621 nm} = 2 eV$

TestHub · Accepted Answer

Band gap = h c λ 0 , where λ 0 - threshold wavelength Band gap = 1242 ev - nm 621 nm = 2 eV

Physics - Semiconductors Question with Solution | TestHub

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