The electron density of intrinsic semiconductor at room temperature is 10 16 m - 3 . When doped with a trivalent impurity, the electron density is decreased to 10 14 m - 3 at the same temperature. The

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The electron density of intrinsic semiconductor at room temperature is 10 16 m - 3 . When doped with a trivalent impurity, the electron density is decreased to 10 14 m - 3 at the same temperature. The majority carrier density is

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n e × n h = n i 2 n i = 10 16 m - 3 n e = 10 14 m - 3 given ⇒ n h = n i 2 n e = 10 16 2 10 14 = 10 32 10 14 = 10 18 m - 3 Given semiconductor is doped with a trivalent impurity, therefore majority charge carriers are holes.

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